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Muhammad Fahad Bhopal 1 Article
400 A Study of Silicon Crystallization Dependence upon Silicon Thickness in Aluminum-induced Crystallization Process
Doo Won Lee, Muhammad Fahad Bhopal, Soo Hong Lee
Korean J. Met. Mater. 2018;56(5):400-405.   Published online 2018 May 8
DOI: https://doi.org/10.3365/KJMM.2018.56.5.400

Abstract
Aluminum-induced crystallization(AIC) is one of the ways to improve characteristics of thin-film poly-crystalline (TFPC) silicon solar cell since it shows large grain size and good properties for TFPC silicon solar cell. In AIC process, aluminum is firstly deposited on foreign substrate. Then, silicon is deposited on aluminum. Annealing was done..... More

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